0.18μm5GHz互補式金氧半微機電射頻濾波器之研製

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题名:	0.18μm5GHz互補式金氧半微機電射頻濾波器之研製
其它题名:	0.18μm 5GHz CMOS-MEMS RF filter circuit design
作者:	林政筌 Lin, Jeng-Chuan
贡献者:	陳家豪 Chen, Ja-Hao 東海大學電機工程學系
关键词:	射頻濾波器;射頻微機電 RF filter;RF MEMS
日期:	2009
上传时间:	2011-02-25T03:16:45Z (UTC)
摘要:	隨著行動通訊電子產品的大眾化，行動通訊產品快速成長，為了讓產品讓使用者更方便使用，對產品輕薄短小以及成本降低極盡要求，而系統整合(SOC)正是可以滿足以上之要求，因此系統整合正是目前技術發展的趨勢。近年來矽半導體製程、電腦輔助設計軟體、以及電路設計技巧的進步，已讓數位與類比電路的整合度大大提高，反觀要把射頻電路做整合的話，仍有許多困難要克服，許多無法整合的高頻電路中，其中之一就是高頻濾波電路。由於矽基板是導電材料而造成損耗大，使得在矽基板上製作元件品質因素(Q 值)不高，如果濾波器Q 值不高會使濾波效果有限，造成頻譜選擇能力差，難以將濾波器整合。此論文是利用微機電製程技術，將元件的品質因素提高，進而使高頻濾波器電路能夠整合於系統的機會提高，達到系統整合的目的。此濾波器特性有較好插入損耗的表現，損耗最低在4.7 GHz可達到3.7dB的表現。此特性是目前CMOS濾波器研究中最好之一。 With mobile communication products popularizing, the communication products expand speedily. For convenience to user, it is needed extremely to lighten and shrink the mobile productions. The system on a chip (SOC) is a solution to satisfy the need. Therefore, the SOC is a current trend of the development. In past years, silicon-base semiconductor process, computer-aided design tools, and circuit design skills have all made great progress, and it makes the high integration between digital and analog circuits. However, it is difficult to integrate with radio frequency (RF) circuits. One of those RF circuits is RF filter. Because silicon substrate is conductance material inducing large power loss and low quality factor (Q) of components. If the Q factor of RF-filter is low, the filter capability is limited. It makes bad selectivity of the filter bad and the filter is difficult to be integrated. In this study, for achieving the purpose of SOC, the CMOS-MEMS technology is utilized to improve the quality factor of the component, and then to increase the probability of integrating the RF filter into a system. The proposed filter has a good insertion loss performance. The minimum insertion loss performance can reach 3.7dB at 4.7 GHz, which is one of the best performances in past passive CMOS RF bandpass filter studies.
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